EK42641-02【PDF 3/8 页】KIT EVAL FOR 42641 RF SWITCH

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PE42641

Product Specification

Figure 3. Pin Configuration (Top View)

Pin 1

Table 5. Absolute Maximum Ratings

Symbol

V DD

Parameter/Conditions

Power supply voltage

Min

-0.3

Max

4.0

Units

V

GND

1

12

GND

V I

Voltage on any DC input

-0.3

V DD + 0.3

V

RF input power (50 ? )

RF input power (50 ? )

V DD

V2

V1

2

3

4

Exposed

Ground

Paddle

11

10

9

ANT

GND

GND

T ST

P IN (50 ? )

Storage temperature range

4,5

824-915 MHz

4,5

-65

+150

+38

°C

dBm

1710-1910 MHz

+36

RF input power (VSWR = ( ∞ :1)

Table 3. Pin Descriptions

P IN ( ∞ :1)

4,5

824-915 MHz

RF input power (VSWR = ( ∞ :1) 4,5

1710-1910 MHz

+35

+33

dBm

Pin No.

1

Pin Name

GND

Ground

Description

V ESD 6

ESD Voltage, ANT pin

ESD Voltage, all pins

4000

2000

V

V

2

3

4

V DD

V2

V1

Supply

Switch control input, CMOS logic level

Switch control input, CMOS logic level

Notes:

4. Assumes RF input period of 4620 μ s and duty cycle of 50%

5. V DD within operating range specified in Table 4

6. ESD Voltage (HBM, MIL-STD-883 Method 3015.7)

5

6

7

8

9

10

11

GND

RF4 2

GND

RF3 2

GND

GND

ANT 2

Ground

RF Port 4

Ground

RF Port 3

Ground

Ground

RF Common – Antenna

Exceeding absolute maximum ratings may cause

permanent damage. Operation should be restricted to

the limits in the Operating Ranges table. Operation

between operating range maximum and absolute

maximum for extended periods may reduce reliability.

Table 6. Truth Table

RF1

12

13

14

15

16

GND

2

GND

RF2 2

N/C

Ground

RF Port 1

Ground

RF Port 2

No Connect

Path

ANT – RF1

ANT – RF2

ANT – RF3

ANT – RF4

V2

0

1

0

1

V1

0

0

1

1

Paddle

GND

Ground for proper device operation

Note:

2. Blocking capacitors needed only when non-zero DC voltage present

Electrostatic Discharge (ESD) Precautions

Table 4. Operating Ranges

When handling this UltraCMOS ? device, observe the

same precautions that you would use with other ESD-

Parameter

Temperature range

Symbol Min Typ Max Units

T OP -40 +85 °C

sensitive devices. Although this device contains circuitry

to protect it from damage due to ESD, precautions

should be taken to avoid exceeding the specified rating.

V DD Supply Voltage

V DD

2.65 2.75

2.85

V

RF input power (VSWR ≤ 3:1)

I DD Power Supply Current

(V DD = 2.75V)

RF input power 3 (VSWR ≤ 3:1)

824-915 MHz

3

1710-1910 MHz

Control Voltage High

I DD

P IN

V IH

1.4

13

50

+35

+33

μA

dBm

V

Latch-Up Avoidance

Unlike conventional CMOS devices, UltraCMOS ?

devices are immune to latch-up.

Moisture Sensitivity Level

The Moisture Sensitivity Level rating for the PE42641 in

the 16-lead 3x3 QFN package is MSL1.

Control Voltage Low

V IL

0.4

V

Note:

3. Assumes RF input period of 4620 μ s and duty cycle of 50%

Document No. 70-0216-07 │ www.psemi.com

?2007-2012 Peregrine Semiconductor Corp. All rights reserved.

Page 3 of 8

Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com

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